1/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b abbreviated symbol : z7 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) umz7n rohm : umt6eiaj : sc-88 abbreviated symbol : z7 each lead has same dimensions 0.22 1.21.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 emz7 rohm : emt6 general purpose transistor (dual transistors) emz7 / umz7n ? features ? dimensions (unit : mm) 1) both a 2sa2018 chip and 2sc5585 chip in a emt or umt package. 2) mounting possible with emt3 or umt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. 5) low v ce(sat) ? structure npn / pnp epitaxial planar silicon transistor ? inner circuit tr 2 tr 1 (3) emz7 / umz7n (2) (1) (4) (5) (6) ? absolute maximum ratings (ta=25 ? c) parameter symbol limits unit tr 1 tr 2 v cbo 15 15 v v ceo 12 12 v v ebo 6 6 v i c i cp 500 500 ma 1 1 a tj 150 c tstg 55 to + 150 c p c 150(total) mw ? 1 collector-base voltagecollector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded. sot-563 downloaded from: http:///
2/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n ? electrical characteristics (ta=25 ? c) tr 1 (npn) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 1512 6 270 320 7.5 0.10.1 90 680 250 vi c = 10 a i c = 1ma i e = 10 a v cb = 15v v eb = 6v v ce /i c = 2v/10ma v ce = 2v, i c = 10ma, f = 100mhz i c /i b = 200ma /10ma v cb = 10v, i e = 0a, f = 1mhz vv a a mv mhz pf typ. max. unit conditions collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltagetransition frequency output capacitance tr 2 (pnp) symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) f t cob min. 15 12 6 270 i c = 10 a i c = 1ma i e = 10 a v cb = 15v v eb = 6v v ce /i c = 2v/ 10ma v ce = 2v, i c = 10ma, f = 100mhz i c /i b = 200ma/ 10ma v cb = 10v, i e = 0a, f = 1mhz 260 100 6.5 typ. 0.1 0.1 680 250 max. vv v a a mv mhz pf unit conditions parameter collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltagetransition frequency output capacitance ? packaging specifications umz7nemz7 tr 3000 t2r 8000 taping part no. packaging typecode basic ordering unit (pieces) downloaded from: http:///
3/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n ? electrical characteristic curves tr 1 (npn) 0 1 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 100 0.5 1.0 1.5 v ce =2v 1000 ta = 1 25 c 25 c 40 c 2 5 20 50 200 500 1 2 5 10 20 50 100 200 500 collector current : i c (ma) fig.2 dc current gain vs. collector current 10 dc current gain : h fe 1000 20 50 100 200 500 1000 ta = 1 25 c 52 1 v ce =2v 25 c 40 c 1 2 5 10 20 50 100 200 i c /i b =20 1 2 5 10 20 50 100 200 5001000 collector saturation voltage : v ce (sat) (mv) ta = 1 25 c 500 1000 25 c 40 c collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce (sat) ( v) 1 2 5 10 20 50 100 200 ta = 25 c 1 2 5 10 20 50 100 200 5001000 collector current : i c (ma) i c /i b = 50 500 1000 20 10 fig.4 collector-emitter saturation voltage vs. collector current ( ? ) 10 20 50 100 200 500 1000 2000 i c /i b = 20 1 2 5 10 20 50 100 200 5001000 base saturation voltage : v be (sat) (mv) ta = 40 c 5000 10000 25 c 125 c collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 2 1 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 500 1000 ta = 25?c v ce = 2v f t ( mh z) collector to base voltage : v cb (v) pulsed fig.6 collector output capacitance emitter input capacitance vs. base voltage 0.2 0.1 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 500 1000 ta = 25 c i e = 0a f = 1mhz emitter input capacitance : cib (pf) collector output capacitance : cob (pf) emitter to base voltage : v eb (v) cib cob fig.7 collector output capacitance vs collector-base voltage emitter input capacitance vs emitter-base voltage downloaded from: http:///
4/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n tr 2 (pnp) 0 1 2 5 20 50 100 200 500 1000 10 base to emitter voltage : v be (v) fig.8 grounded emitter propagation characteristics collector current : i c (ma) 1.5 1.0 0.5 v ce = 2v ta=125?c ta=25?c ta= -40?c 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.9 dc current gain vs. collector current 1 dc current gain : h fe 500 2 5 10 200 500 1000 20 50 100 ta=25 c ta= 40 c ta=125 c v ce = 2v 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.10 collector-emitter saturation voltage vs. collector current ( ) 1 collector saturation voltage : v ce (sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta=25 c ta= 40 c ta=125 c i c /i b =20 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.11 collector-emitter saturation voltage vs. collector current 1 collector saturation voltage : v ce (sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta = 25 c i c / i b = 50 i c / i b = 20 i c / i b = 10 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.12 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 500 20 50 100 2000 5000 10000 200 500 1000 ta = 25 c ta = 40 c ta = 125 c i c /i b = 20 1 2 5 10 20 50 100 200 1000 emitter current : i c (ma) fig.13 gain bandwidth product vs. emitter current 1 transition frequency : f t (mhz) 500 2 5 10 200 500 1000 20 50 100 v ce = 2v ta = 25 c 0.2 0.5 1 2 5 10 20 50 100 0.1 1 2 5 10 20 50 100 200 500 1000 ta = 25 c f = 1mhz i e = 0a emitter input capacitance : cib(f) emitter to base voltage : v eb ( v) fig.14 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob collector output capacitance : cob (pf) downloaded from: http:///
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, i s permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement witho ut notice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the spec ications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information spec ied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typica l functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-us e electronic equipment or devices (such as audio visual equipment, ofce-automati on equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the produ cts safety measures to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redundancy, re control and fai l-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospace machinery, nu clear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsi bility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative befor e purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///
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